Prototype infrared-activated pixel arrays


Prototype infrared-activated pixel arrays

Prototype infrared-activated pixel arrays—including 8 × 8 (above), 32 × 32, and 256 × 256 detector pixel arrays—were fabricated on BaTiO3 and BaSrTiO3 thin films deposited on various silicon substrates using laser genotype direct-write processing. The 8 × 8 array patterns comprise 64 individual pixels, where the pixel dimensions are 100 × 100 µm with a center-to-center spacing of 200 µm. Piezoresponse-force microscopy shows appreciable nanoscale ferroelectric phase contrast in laser-pixelated regions (upper right), further confirming pyroelectric conversion to the infrared-active tetragonal phase. Ferroelectric phase contrast was not observed for the inactive nanoparticle matrix (bottom right) surrounding the laser-activated pixel regions.  More »