clsp11p26_individual-memristor-circuit


An individual memristor circuit. The top and bottom electrodes are platinum (Pt) and sandwich a bilayer of titanium oxide. The bilayer consists of an oxygen-depleted region (TiO2−x) and an insulating TiO2 layer. The applied voltage will cause the mobile, positively charged oxygen vacancies to move in and out of the insulating region, thereby enabling both high and low resistance states. The overall height of the memristor is approximately 10 nm. Memristor Nonvolatile Memories

An individual memristor circuit. The top and bottom electrodes are platinum (Pt) and sandwich a bilayer of titanium oxide. The bilayer consists of an oxygen-depleted region (TiO2−x) and an insulating TiO2 layer. The applied voltage will cause the mobile, positively charged oxygen vacancies to move in and out of the insulating region, thereby enabling both high and low resistance states. The overall height of the memristor is approximately 10 nm. Memristor Nonvolatile Memories  More »